SN74CBT3125CDR

具有 –2V 下冲保护的 5V、1:1 (SPST)、4 通道 FET 总线开关

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· Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V

· Bidirectional Data Flow, With Near-Zero Propagation Delay

· Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)

· Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)

· Data and Control Inputs Provide Undershoot Clamp Diodes

· Low Power Consumption (ICC = 3 µA Max)

· VCC Operating Range From 4 V to 5.5 V

· Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)

· Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs

· Ioff Supports Partial-Power-Down Mode Operation

· Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

· ESD Performance Tested Per JESD 22

− 2000-V Human-Body Model (A114-B, Class II)

− 1000-V Charged-Device Model (C101)

· Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating

description/ordering information

The SN74CBT3125C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3125C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3125C is organized as four 1-bit bus switches with separate output-enable (1OE, 2OE, 3OE, 4OE) inputs. It can be used as four 1-bit bus switches or as one 4-bit bus switch. When OE is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.